IXFN360N10T MOSFET Module, N-Ch, 100V, 360A IXYS Semiconductor LED Case Size: 3mm x

LED Case Size: 3mm x 1mm

TE CONNECTIVITY - 154N-100G-RT - Pressure Sensor

3 Component Handle

INFINEON - BGT24MTR12E6327XUMA1 - RF Transceiver

IXFN360N10T MOSFET Module, N-Ch, 100V, 360A IXYS Semiconductor LED Case Size: 3mm xIXYS SEMICONDUCTOR IXFN360N10T MOSFET Transistor, GigaMOS, N Channel, 360 A, 100 V, 0. 0026 ohm, 100 V, 4. 5 V, SOT 227B Transistor Polarity: N Channel Continuous Drain Current Id: 360A Drain Source Voltage Vds: 100V On Resistance Rds(on): 0. 0026ohm Rds(on) Test Voltage Vgs: 100V Threshold Voltage Vgs: 4. 5V Power Dissipation Pd: 830W Operating Temperature Max: 175C Product Range: Trench HiperFET Series SVHC: No SVHC (07 Jul 2017)